Crystal growth of dislocation-free GaAs.

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

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Twin-Free GaAs Nanosheets

10 nanolasers and LED applications. 11 GaAs nanostructures (e.g., nanowires and 12 nanosheets) with high surface-to-volume 13 ratios, however, suffer from high surface 14 state densities and high surface recombina15 tion velocities, which typically limit their 16 optoelectronic device performance. Passiva17 tion of GaAs nanostructures has been widely 18 studied in the literature, including clad...

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures.

Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) are demonstrated. In contrast to GaAs nanowires grown by (SAG) in which rotational twins and stacking faults are almost universally observed, twin formation is either suppressed or eliminated within properly oriented nanosheets are grown under a range of growth conditions. A morphology transition i...

INFLUENCE OF A ROTATING MAGNETIC FIELD ON THE CRYSTAL GROWTH OF GaAs

The GaAs wafer market is characterised by an increasing demand on high-quality substrates ready for epitaxial post-processing. Nowadays, advanced Vertical Bridgman (VB) growth variants such as the Vertical Gradient Freeze (VGF) technique, are preferentially employed to meet the strong requirements according to a low dislocation density and high homogeneity of the substrates. By combining the VG...